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| 2SC1344, 2SC1345 Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1344, 2SC1345 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1344 30 30 5 100 200 150 -55 to +150 2SC1345 55 50 5 100 200 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) 2SC1344 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO 1 2SC1345 Max -- -- -- 0.5 0.5 Min 55 50 5 -- -- Typ -- -- -- -- -- -- -- -- 230 -- -- -- Max -- -- -- 0.5 0.5 1200 0.75 0.5 -- 3.5 8 1 V V MHz pF dB dB Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB =18 V, IE = 0 VCB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 10 Hz, Rg = 10 k VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 k Min 30 30 5 -- -- 250 -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 230 -- -- -- DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 1200 250 0.75 0.5 -- 3.5 8 1 -- -- -- -- -- -- VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Cob NF Note: D 1. The 2SC1344 and 2SC1345 are grouped by h FE as follows. E 400 to 800 F 600 to 1200 250 to 500 2 2SC1344, 2SC1345 Small Signal h Parameters (VCE = 5V, IC = 0.1 mA, f = 270 Hz, Ta = 25C, Emitter common) Item Input impedance Voltage feedback ratio Current transfer ratio Output admittance Symbol hie hre hfe hoe D 110 9.5 340 12.0 E 170 14.5 540 12.5 F 240 16 825 13.5 S Unit k x 10 -4 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 250 10 Collector Current IC (mA) 200 8 150 6 100 4 2 50 Typical Output Characteristics P C= 26 20 0m 24 W 22 20 18 16 14 12 10 8 6 4 2 A IB = 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 24 0 100 150 50 Ambient Temperature Ta (C) 0 DC Current Transfer Ratio vs. Collector Current 700 DC Current Transfer Ratio hFE VCE = 12 V 600 Collector Current IC (mA) 4 5 Typical Transfer Characteristics VCE = 12 V 500 Ta 5 =7 3 C 400 25 2 300 1 200 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 20 Collector Current IC (mA) 50 0 0.6 0.8 1.0 0.2 0.4 Base to Emitter Voltage VBE (V) 3 2SC1344, 2SC1345 Base to Emitter Voltage vs. Ambient Temperature Collector Output Capacitance Cob (pF) 0.9 Base to Emitter Voltage VBE (V) VCE = 12 V IC = 2 mA Collector Output Capacitance vs. Collector to Base Voltage 10 IE = 0 f= 1 MHz 5 0.8 0.7 0.6 2 0.5 0.4 -20 1 1 5 10 2 Collector to Base Voltage VCB (V) 0 20 40 60 Ambient Temperature Ta (C) 80 Emitter Input Capacitance vs. Emitter to Base Voltage 10 Emitter Input Capacitance Cie (pF) Signal Source Resistance Rg (k) IC = 0 f= 1 MHz 5 100 Contours of Constant Noise Figure 1 dB 10 dB 8 dB 6 dB 4 dB 2 dB 1 dB 2 30 2 dB 4d 10 B 6d B 38 dB 10 dB 1.0 0.3 0.1 0.001 0.003 0.01 VCE = 6 V f = 10 Hz 1 1 5 2 Emitter to Base Voltage VEB (V) 10 0.03 0.1 0.3 1.0 3.0 Collector Current IC (mA) 4 2SC1344, 2SC1345 Contours of Constant Noise Figure 100 Signal Source Resistance Rg (k) Signal Source Resistance Rg (k) VCE = 6 V f = 120 Hz 100 30 10 VCE = 6 V f = 1 kHz Contours of Constant Noise Figure 10 8 dB 6 dB dB dB 8 dB 6 dB 4 30 4 2 10 4 2 dB dB 1 2 3 8 1.0 0.3 dB dB dB dB 1 3 1 dB dB dB dB 1 dB 6 2 1.0 0.3 dB dB 10 dB dB 6 8 4 dB 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1.0 3.0 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1.0 3.0 Collector Current IC (mA) Collector Current IC (mA) Noise Figure vs. Frequency 12 10 Noise Figure NF (dB) 8 6 4 2 0 10 20 50 100 200 500 1k Frequency f (Hz) VCE = 6 V IC = 0.1 mA Rg = 10 k 10 8 Noise Figure vs. Collector to Emitter Voltage Noise Figure NF (dB) IC = 0.1 mA f = 10 Hz Rg = 10 k 6 4 2 0 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 5 2SC1344, 2SC1345 Noise Figure vs. Collector to Emitter Voltage 10 8 IC = 0.1 mA f = 120 Hz Rg = 10 k 10 8 IC = 0.1 mA f = 1 kHz Rg = 10 k Noise Figure vs. Collector to Emitter Voltage Noise Figure NF (dB) Noise Figure NF (dB) 6 6 4 4 2 2 0 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 0 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 6 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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